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| (R) L3100B L3100B1 OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE Application Specific Discretes A.S.D.TM FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 265 V PROGRAMMABLE CURRENT LIMITATION FROM 50 mA TO 550 mA HIGH SURGE CURRENT CAPABILITY IPP = 100A 10/1000 s DESCRIPTION Dedicated to sensitive telecom equipment protection, this device can provide both voltage protection and current limitation with a very tight tolerance. Its high surge current capability makes the L3100B a reliable protection device for very exposed equipment, or when series resistors are very low. The breakdown voltage can be easily programmed by using an external zener diode. A multiple protection mode can also be performed when using several zener diodes, providing each line interface with an optimized protection level. The current limiting function is achieved with the use of a resistor between the gate N and the cathode. The value of the resistor will determine the level of the desired current. DIL 8 SCHEMATIC DIAGRAM Anode Gate N Gate P Cathode COMPLIESWITH THE FOLLOWING STANDARDS : CCITT K17 - K20 VDE 0433 CNET 10/700 5/310 10/700 5/200 0.5/700 0.2/310 s s s s s s 1.5 38 2 50 1.5 38 kV A kV A kV A CONNECTION DIAGRAM Gate N NC Gate P Cathode 1 2 3 4 8 7 6 5 Anode Anode Anode Anode TM: ASD is trademarks of SGS-THOMSON Microelectronics. September 1998 Ed : 3A 1/8 L3100B/L3100B1 ABSOLUTE MAXIMUM RATINGS ( T amb= 25 C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 s 8/20 s tp = 10 ms Value 100 250 50 Unit A ITSM Non repetitive surge peak on-state current Storage temperaturerange Maximum operating junction temperature A C C C Tstg Tj TL - 40 to + 150 + 150 230 Maximum lead temperature for soldering during 10s Note 1 : Pulse waveform 10/1000 s % I PP 100 50 0 tr tp t THERMAL RESISTANCE Symbol Rth (j-a) Junction-to-ambient Parameter Value 80 Unit C/W 2/8 L3100B/L3100B1 ELECTRICAL CHARACTERISTICS (Tamb = 25 C) Symbol VRM IRM VBR VBO IH IBO IPP VGN IGN, IGP VRGN C Parameter Stand-off voltage Reverseleakagecurrent Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Gate voltage Triggering gate current Reverse gate voltage Capacitance IRM VRM VBR VBO V IBO IH Ipp I OPERATION WITHOUT GATE IRM @ VRM Type max. VBR @ IR min. VBO max. @ min. note 1 A L3100B L3100B1 6 40 6 40 V 60 250 60 250 V 265 255 mA 1 1 V 350 350 mA 200 200 mA 500 500 IBO max. IH min. note 1 mA 280 210 C max. note 2 pF 100 100 OPERATION WITH GATES VGN @ IGN = 200 mA Type min. max. IGN @ VAC = 100V min. max. VRGN @ IG = 1mA min. IGP @ VAC = 100V max. V L3100B/B1 Note 1 : Note 2 : V 1.8 mA 30 mA 200 V 0.7 mA 150 0.6 See the reference test circuits for IH, IBO and VBO parameters. VR = 5 V, F = 1MHz. 3/8 L3100B/L3100B1 REFERENCE TEST CIRCUIT FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A static relay. K R1 140 R2 240 220V Vout IBO measure Transformer 220V/800V 5A D.U.T V BO measure TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT = GO - NOGO TEST. R D.U.T. VBAT = - 48 V Surge generator - VP This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functionaltest circuit. This test can be performedif the reference test circuit can't be implemented. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back to the OFF-State within a durationof 50 ms max. 4/8 L3100B/L3100B1 Figure 1 : Surge peak current versus overload duration. Figure 2 : Relative variation of holding current versus junction temperature. 60 50 40 30 20 10 ITSM(A) F=50Hz Tj initial=25 C 1.2 1.1 1.0 0.9 t(s) 0.8 1E+0 1E+1 1E+2 1E+3 0 1E-2 1E-1 0.7 0 10 20 30 40 50 60 70 Figure 3 : Relative variation of breakdown voltage versus ambient temperature. 1.04 1.03 1.02 1.01 Figure 4 : Junction capacitance versus reverse applied voltage. 100 80 60 40 1.00 20 0.99 0.98 0 10 20 30 40 50 60 70 0 1 10 100 5/8 L3100B/L3100B1 APPLICATION CIRCUIT Overvoltage Protection and Current limitation PTC HOOK + A SPEECH DIALING RINGER L3100B\B1 G N C Ra - RINGER Table below gives the tolerance of the limited current IT for each standardized resistor value. The formula (1) has been used with VGN values specified at the typical gate current level IGN. CURRENT TOLERANCE R ( 5%) 3.00 3.30 3.60 3.90 4.30 4.70 5.10 5.60 6.20 6.80 7.50 8.20 9.10 10.10 11.00 12.00 13.00 15.00 16.00 18.00 20.00 22.00 24.00 27.00 30.00 IT mA min 268 246 228 213 196 181 170 158 145 135 152 117 108 101 95 90 85 78 75 70 66 62 60 56 54 IT mA max 533 503 478 456 433 413 396 379 361 347 333 322 310 299 291 283 277 266 263 256 250 245 242 237 233 - + L3100B LOAD VGN Min. V 0.75 @ Max. V 0.95 IGN Typ. mA 100 6/8 L3100B/L3100B1 Ground key telephone set Protection PROTECTION MODES : ON HOOK = Ringer circuit protection is ensured with breakdown voltage at 265 V. OFF HOOK = In dialing mode and in speech mode, the breakdown voltage of L3100B can be adapted to different levels with zener diodes. ORDER CODE L3100 B 1 VERSION. = VBR = 265 V 1 = VBR = 255 V MARKING : Logo, Date Code,part Number. 7/8 L3100B/L3100B1 PACKAGE MECHANICAL DATA. DIL 8 (Plastic) DIMENSIONS REF. I b1 L Millimetres 0.70 1.39 0.91 0.5 0.38 8.8 2.54 7.62 7.1 4.8 3.3 0.44 1.60 0.017 0.50 0.015 9.80 0.027 1.65 0.055 1.04 0.036 Inches Min. Typ. Max. Min. Typ. Max. a1 B B1 b b1 D E e e3 1 4 a1 0.065 0.041 0.020 0.020 0.385 0.346 0.100 0.300 0.280 0.189 0.130 0.063 B B1 F b Z e e3 D E 8 5 F I L Z Weight:0.59 g Packaging : Product supplied in antistatic tubes. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 8/8 |
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